SPN1304 description applications the SPN1304 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration ( sot-323 ; sc-70 ) part marking ? 20v/2.0a,r ds(on) =225m ? @v gs =4.5v ? 20v/1.5a,r ds(on) =315m ? @v gs =2.5v ? 20v/1.0a,r ds(on) =425m ? @v gs =1.8v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-323 ( sc?70 ) package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN1304s32rg sot-323 04yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN1304s32rg : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate ?source voltage v gss 12 v t a =25 2.0 continuous drain current(t j =150 ) t a =70 i d 1.5 a pulsed drain current i dm 10 a continuous source current(diode conduction) i s 1.6 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w SPN1304 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless o therwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.35 1.0 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds = 20v,v gs =0v 1 zero gate voltage drain current i dss v ds = 20v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds 4.5v,v gs =5v 2 a v gs =4.5v,i d =2.0a 0.150 0.225 v gs =2.5v,i d =1.5a 0.210 0.315 drain-source on-resistance r ds(on) v gs =1.8v,i d =1.0a 0.320 0.425 ? forward transconductance gfs v ds =10v,i d =1.2a 2.6 s diode forward voltage v sd i s =0.5a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 1.2 1.5 gate-source charge q gs 0.2 gate-drain charge q gd v ds =10v,v gs =4.5v, i d 0.7a 0.3 nc input capacitance c iss 110 output capacitance c oss 34 reverse transfer capacitance c rss v ds =10v gs =0v f=1mhz 16 pf t d(on) 5 10 turn-on time t r 8 15 t d(off) 10 18 turn-off time t f v dd =10v,r l =10 ? , i d 1.0a v gen =4.5v ,r g =6 ? 1.2 2.8 ns SPN1304 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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